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HGT5A40N60A4D
Data Sheet February 2000 File Number 4783.1
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49347. The diode used in anti-parallel is the development type 49374. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49349.
Features
* 100kHz Operation at 390V, 40A * 200kHz Operation at 390V, 20A * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125o * Low Conduction Loss
Packaging
JEDEC STYLE STRETCH TO-247
E C G
Ordering Information
PART NUMBER HGT5A40N60A4D PACKAGE TO-247-ST BRAND 40N60A4D
COLLECTOR (FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000
HGT5A40N60A4D
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGT5A40N60A4D Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL 75 63 300 20 30 200A at 600V 625 5 -55 to 150 260 W W/oC
oC oC
UNITS V
600
A A A V V
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE: 1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
TJ = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TJ = 25oC TJ = 125oC TJ = 25oC TJ = 125oC MIN 600 4.5 200 TYP 1.7 1.5 5.6 8.5 350 450 25 18 145 35 400 850 370 MAX 250 3.0 2.7 2.0 7 250 405 520 UNITS V A mA V V V nA A V nC nC ns ns ns ns J J J
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 40A, VGE = 15V
Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge
VGE(TH) IGES SSOA VGEP Qg(ON)
IC = 250A, VCE = VGE VGE = 20V TJ = 150oC, RG = 2.2, VGE = 15V L = 100H, VCE = 600V IC = 40A, VCE = 0.5 BVCES IC = 40A, VCE = 0.5 BVCES VGE = 15V VGE = 20V
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3)
td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF
IGBT and Diode at TJ = 25oC ICE = 40A VCE = 0.65 BVCES VGE =15V RG= 2.2 L = 200H Test Circuit (Figure 24)
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HGT5A40N60A4D
Electrical Specifications
PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 2) Turn-On Energy (Note 2) Turn-Off Energy (Note 3) Diode Forward Voltage Diode Reverse Recovery Time TJ = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF VEC trr IEC = 40A IEC = 40A, dIEC/dt = 200A/s IEC = 1A, dIEC/dt = 200A/s Thermal Resistance Junction To Case RJC IGBT Diode NOTES: 2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 24. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. TEST CONDITIONS IGBT and Diode at TJ = 125oC ICE = 40A VCE = 0.65 BVCES VGE = 15V RG= 2.2 L = 200H Test Circuit (Figure 24) MIN TYP 27 20 185 55 400 1220 700 2.25 48 38 MAX 225 95 1400 800 2.7 55 45 0.2 1 UNITS ns ns ns ns J J J V ns ns
oC/W oC/W
Typical Performance Curves
80 ICE , DC COLLECTOR CURRENT (A)
Unless Otherwise Specified
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE = 15V 70 60 50 40 30 20 10 0 25 50 75 100 125 150 PACKAGE LIMITED
225 200 175 150 125 100 75 50 25 0 0
TJ = 150oC, RG = 2.2, VGE = 15V, L = 100H
100
200
300
400
500
600
700
TC , CASE TEMPERATURE (oC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
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HGT5A40N60A4D Typical Performance Curves
300 fMAX, OPERATING FREQUENCY (kHz) 200 VGE 75oC 15V TC
Unless Otherwise Specified
(Continued)
tSC , SHORT CIRCUIT WITHSTAND TIME (s)
12 VCE = 390V, RG = 2.2, TJ = 125oC 10 ISC 8
1200
1000
100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) ROJC = 0.2oC/W, SEE NOTES
800
6 tSC 4
600
400
RG = 2.2, L = 200H, VCE = 390V 10 3 10 40 70
2 10
11
12
13
14
15
200 16
ICE, COLLECTOR TO EMITTER CURRENT (A)
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 TJ = 25oC TJ = 150oC TJ = 125oC DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250s
80 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 TJ = 150oC TJ = 25oC TJ = 125oC DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
5500 5000 4500 4000 3500 3000 2500 2000 1500 1000 500 0 0 10 20 30 TJ = 25oC, VGE = 12V, VGE = 15V 40 50 60 70 80 TJ = 125oC, VGE = 12V, VGE = 15V EOFF, TURN-OFF ENERGY LOSS (J) EON2 , TURN-ON ENERGY LOSS (J) RG = 2.2, L = 200H, VCE = 390V
1800 1600 1400 1200 1000 800 600 400 200 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 0 10 20 30 TJ = 25oC, VGE = 12V OR 15V 40 50 60 70 80 TJ = 125oC, VGE = 12V OR 15V RG = 2.2, L = 200H, VCE = 390V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT
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ISC, PEAK SHORT CIRCUIT CURRENT (A)
HGT5A40N60A4D Typical Performance Curves
42 td(ON)I, TURN-ON DELAY TIME (ns) 40 38 36 34 32 30 28 26 24 22 0 10 20 30 TJ = 25oC, TJ = 125oC, VGE = 15V 40 50 60 70 80 0 0 10 20 RG = 2.2, L = 200H, VCE = 390V TJ = 25oC, TJ = 125oC, VGE = 15V trI , RISE TIME (ns) 100 80 60 40 20 TJ = 25oC, TJ = 125oC, VGE = 15V 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A)
Unless Otherwise Specified
(Continued)
120 RG = 2.2, L = 200H, VCE = 390V TJ = 125oC, TJ = 25oC, VGE = 12V
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT
190 td(OFF)I , TURN-OFF DELAY TIME (ns) 180 170 160 150 140 130
RG = 2.2, L = 200H, VCE = 390V
70 65 tfI , FALL TIME (ns) 60 55 50 45 40 35 30 0
RG = 2.2, L = 200H, VCE = 390V TJ = 125oC, VGE = 12V OR 15V
VGE = 12V, VGE = 15V, TJ = 125oC
VGE = 12V OR 15V, TJ = 25oC
TJ = 25oC, VGE = 12V OR 15V
0
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT
16 VGE, GATE TO EMITTER VOLTAGE (V)
400 350 300 250 200 150 100 50 0 6 7 8 9 10 11 TJ = -55oC TJ = 25oC DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250s
IG(REF) = 1mA, RL = 7.5, TC = 25oC
14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 VCE = 200V VCE = 600V VCE = 400V
TJ = 125oC
VGE, GATE TO EMITTER VOLTAGE (V)
QG , GATE CHARGE (nC)
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
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HGT5A40N60A4D Typical Performance Curves
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 6 TJ = 125oC, L = 200H, VCE = 390V, VGE = 15V 5 4 3 2 1 0 ETOTAL = EON2 +EOFF ICE = 80A
Unless Otherwise Specified
(Continued)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 100
TJ = 125oC, L = 200H VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF ICE = 80A ICE = 40A
10
ICE = 40A ICE = 20A 25 50 75 100 125 150
1 ICE = 20A
0.1
1
10
100
500
TC , CASE TEMPERATURE (oC)
RG, GATE RESISTANCE ()
FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
14 FREQUENCY = 1MHz 12 C, CAPACITANCE (nF) 10 8 CIES 6 4 COES 2 CRES 0 0 10 20 30 40 50 60 70 80 90 100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
2.4 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s, TJ = 25oC 2.3
2.2 ICE = 80A 2.1 ICE = 40A 2.0 ICE = 20A 1.9 8 9 10 11 12 13 14 15 16
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE
50 45 IEC , FORWARD CURRENT (A) 40 35 30 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 TJ = 25oC TJ = 125oC DUTY CYCLE < 0.5%, PULSE DURATION = 250s trr, RECOVERY TIMES (ns)
120 110 100 90 80 70 60 50 40 30 20 10 0 VEC , FORWARD VOLTAGE (V) 0
dIEC/dt = 200A/s 125oC trr 125oC tb 25oC trr
125oC ta
25oC ta 25oC tb 5 10 15 20 25 30 35 40
IEC , FORWARD CURRENT (A)
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
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HGT5A40N60A4D Typical Performance Curves
70 65 trr, RECOVERY TIMES (ns) 60 55 50 45 40 35 30 25 20 15 10 200 300 400 500 600 700 800 25oC ta 25oC tb 900 1000 125oC 125oC ta IEC = 40A, VCE = 390V
Unless Otherwise Specified
(Continued)
Qrr, REVERSE RECOVERY CHARGE (nc)
2000 1750 1500 1250 1000 750 500 250 0 200
VCE = 390V 125oC IEC = 40A 125oC IEC = 20A
tb
25oC IEC = 40A
25oC IEC = 20A 400 600 800 1000
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
dIEC/dt, RATE OF CHANGE OF CURRENT (A/s)
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT
ZJC , NORMALIZED THERMAL RESPONSE
100 0.50 0.20 0.10 10-1 0.05 0.02 0.01 SINGLE PULSE 10-2 -5 10 10-4 10-3 10-2 10-1 100 101 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC
t1
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 23. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGT5A40N60A4D 90% VGE L = 200H VCE RG = 2.2 + VDD = 390V ICE 90% 10% td(OFF)I tfI trI td(ON)I EOFF 10% EON2
FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 25. SWITCHING TEST WAVEFORMS
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HGT5A40N60A4D Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 25. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0).
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ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
HGT5A40N60A4D Stretch-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
E A TERM. 4
INCHES SYMBOL MIN 0.180 0.046 0.060 0.095 0.020 0.800 0.605 MAX 0.190 0.051 0.070 0.105 0.026 0.820 0.625
MILLIMETERS MIN 4.58 1.17 1.53 2.42 0.51 20.32 15.37 MAX 4.82 1.29 1.77 2.66 0.66 20.82 15.87 NOTES 2, 3 1, 2 1, 2 1, 2, 3 4 4 5 1 -
Q OR D
A b b1 b2 c D
L1 L
b1 b2 c b
1 2 3 J1 3 2 1
E e e1 J1 L L1 Q OR
0.219 TYP 0.438 BSC 0.090 0.620 0.145 0.210 0.195 0.105 0.640 0.155 0.220 0.205
5.56 TYP 11.12 BSC 2.29 15.75 3.69 5.34 4.96 2.66 16.25 3.93 5.58 5.20
e e1
BACK VIEW
NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder plating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 8-99.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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